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Proceedings Paper

Extraordinary plasmon-QD interaction for enhanced infrared absorption
Author(s): R. V. Shenoi; James Bur; Danhong Huang; S. Y. Lin
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Paper Abstract

The use of metallic nanostructures for enhanced transmission and near field phenomena have been a topic of extensive research. Here we present integration of active media, consisting of InAs quantum dots (QD) embedded in quantum wells, with 2 dimensional metallic hole arrays (2DHA) leading to a strong interaction between resonant surface plasmons, excited at the metal-semiconductor interface, and intersubband transitions of quantum dots. The presence of a low-loss absorber within the enhanced near field region of 2DHA leads to an enhancement of photoresponse. The parameters of 2DHA were designed to overlap with absorption peaks of QDs. We present techniques of fabrication, accurate characterization of enhancement and efforts to optimize the 2DHA-QD coupling. Over an order of magnitude enhancement in photoresponse is observed due to spectral matching of intersubband absorption of quantum dots to that of 2DHA resonance, optimal placement of QD within the structure, and improved interaction lengths due to lateral propagation. This enhancement is also accompanied by significant narrowing of linewidth and the ability to tune the resonance by varying the 2DHA parameters. A hexagonal lattice with periodic circular holes on a thin gold film is used as the 2DHA. With further optimizations, these structures have significant applications in the mid-wave infrared (3-5 μm) and long-wave infrared (8-12 μm) regions for multispectral and polarization sensitive sensing

Paper Details

Date Published: 21 February 2013
PDF: 6 pages
Proc. SPIE 8632, Photonic and Phononic Properties of Engineered Nanostructures III, 86321L (21 February 2013); doi: 10.1117/12.2005268
Show Author Affiliations
R. V. Shenoi, Rensselaer Polytechnic Institute (United States)
James Bur, Rensselaer Polytechnic Institute (United States)
Danhong Huang, Air Force Research Lab. (United States)
S. Y. Lin, Rensselaer Polytechnic Institute (United States)

Published in SPIE Proceedings Vol. 8632:
Photonic and Phononic Properties of Engineered Nanostructures III
Ali Adibi; Shawn-Yu Lin; Axel Scherer, Editor(s)

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