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Proceedings Paper

Linewidth reduction of site-controlled InGaN quantum dots by surface passivation
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Paper Abstract

Indium gallium nitride (InGaN) semiconductor quantum dots are an attractive candidate for scalable room temperature quantum photonics applications owing to their large exciton binding energy and large oscillation strength. Previously, we reported single photon emission from site-controlled InGaN quantum dot structures. However, large homogeneous linewidth and significant non-radiative recombination were thought to be linked to the nearby surface charge centers. These charge centers can lead to spectral diffusion and excessive non-radiative recombinations at high temperature. In this work, ammonium sulfide passivation was investigated. Nitrogen vacancies were successfully passivated by ammonium sulfide ((NH4)2Sx) treatment, and the emission linewidth of a single quantum dot was reduced by 5 meV. Furthermore, the linewidth broadening with an increasing temperature was suppressed in the temperature range from 9 K to 95 K in this study. Satellite emission peak believed to be associated with the nitrogen vacancy was observed for un-passivated quantum dots. The satellite peak was 55 ~ 80 meV away from the main InGaN emission peak and was eliminated after sulfide passivation.

Paper Details

Date Published: 27 March 2013
PDF: 6 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86252C (27 March 2013); doi: 10.1117/12.2005194
Show Author Affiliations
Chu-Hsiang Teng, The Univ. of Michigan (United States)
Lei Zhang, The Univ. of Michigan (United States)
Hui Deng, The Univ. of Michigan (United States)
Pei-Cheng Ku, The Univ. of Michigan (United States)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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