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Proceedings Paper

High power (23W) vertical external cavity surface emitting laser emitting at 1180 nm
Author(s): T. Leinonen; S. Ranta; M. Tavast; R. Epstein; G. Fetzer; . Sandalphon; N. Van Lieu; M. Guina
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Paper Abstract

We report high power operation of a vertical external-cavity surface-emitting laser (VECSEL) operating around 1180 nm. The gain chip of the VECSEL comprises 10 strain-compensated GaInAs/GaAs quantum wells in a top-emitting configuration. A maximum output power of 23 W was achieved with a mount temperature of about 0 ‡C, and 20.5 W with the mount temperature of about 12 °C. By introducing a birefringent filter inside the laser cavity we demonstrate a tuning range of 67 nm. The gain chip was also used to construct a VECSEL for single-frequency operation. In this configuration, a maximum output power of about 11 W was recorded.

Paper Details

Date Published: 18 February 2013
PDF: 6 pages
Proc. SPIE 8606, Vertical External Cavity Surface Emitting Lasers (VECSELs) III, 860604 (18 February 2013); doi: 10.1117/12.2004904
Show Author Affiliations
T. Leinonen, Tampere Univ. of Technology (Finland)
S. Ranta, Tampere Univ. of Technology (Finland)
M. Tavast, Tampere Univ. of Technology (Finland)
R. Epstein, Areté Associates (United States)
G. Fetzer, Areté Associates (United States)
. Sandalphon, Areté Associates (United States)
Cinnabar Optics LLC (United States)
N. Van Lieu, Areté Associates (United States)
M. Guina, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 8606:
Vertical External Cavity Surface Emitting Lasers (VECSELs) III
Jennifer E. Hastie, Editor(s)

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