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Proceedings Paper

Impact of reticle defects on submicron 5x lithography
Author(s): Paolo Canestrari; Samuele Carrera; Giorgio A. L. M. Degiorgis; Vito Visentini
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Paper Abstract

During past years a lot of efforts were put from several authors in order to approach the problems related to reticle defect printability. Several works analized the physical phenomena affecting the mask imperfection reproducibility and recently it was showed that the impact of reticle defects eeems to increase by going from micron to submicron lithography. The goal at the base of the present work has been to verify these hypothesis by starting from the experience collected in the previous works and by designing targeted experiments in order to classify the real critical impact of the possible important factors.

Paper Details

Date Published: 1 June 1990
PDF: 13 pages
Proc. SPIE 1261, Integrated Circuit Metrology, Inspection, and Process Control IV, (1 June 1990); doi: 10.1117/12.20049
Show Author Affiliations
Paolo Canestrari, SGS-Thomson Microelectronics (Italy)
Samuele Carrera, SGS-Thomson Microelectronics (Italy)
Giorgio A. L. M. Degiorgis, SGS-Thomson Microelectronics (Italy)
Vito Visentini, SGS-Thomson Microelectronics (Italy)


Published in SPIE Proceedings Vol. 1261:
Integrated Circuit Metrology, Inspection, and Process Control IV
William H. Arnold, Editor(s)

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