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Proceedings Paper

Low afterpulsing and narrow timing response InGaAs/InP Single-Photon Avalanche Diode
Author(s): Alberto Tosi; Fabio Acerbi; Michele Anti; Franco Zappa
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Paper Abstract

We designed, fabricated and tested a new planar InGaAs/InP Single-Photon Avalanche Diode (SPAD). By optimizing design and fabrication processes, we obtained low afterpulsing and very good timing jitter, with very fast tail. The detector has a separate absorption, charge and multiplication structure, with double p-type Zn diffusion into n-type InP for defining the p-n high-field avalanching junction. The SPAD can be operated at temperatures achievable with thermoelectric coolers mounted in compact packages (like TO-8). When operated in gated mode with 5 V excess bias, the 25 μm active area diameter InGaAs/InP SPAD reaches good performance at 225 K: i) photon detection efficiency of 40% at 1 μm and 25% at 1.55 μm; ii) dark count rate below 100 kcps (counts per second); iii) low afterpulsing allowing to set a hold-off time as short as 1 μs, corresponding to 1 Mcps; iv) timing jitter less than 90 ps (full width at half maximum) and time constant of decaying tail of just 30 ps. Overall this new planar InGaAs/InP SPAD can be exploited in many near-infrared (up to 1.7 μm) applications where low light, wide dynamic range waveforms have to be acquired, e.g. in Time-Correlated Single-Photon Counting (TCSPC) measurements or Time-of-Flight LIDAR applications for eye-safe 3D ranging.

Paper Details

Date Published: 4 February 2013
PDF: 6 pages
Proc. SPIE 8631, Quantum Sensing and Nanophotonic Devices X, 86311C (4 February 2013); doi: 10.1117/12.2004801
Show Author Affiliations
Alberto Tosi, Politecnico di Milano (Italy)
Fabio Acerbi, Politecnico di Milano (Italy)
Michele Anti, Politecnico di Milano (Italy)
Franco Zappa, Politecnico di Milano (Italy)


Published in SPIE Proceedings Vol. 8631:
Quantum Sensing and Nanophotonic Devices X
Manijeh Razeghi, Editor(s)

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