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Proceedings Paper

High near-infrared emission intensity of Er3+-doped zirconium oxide films on a Si(100) substrate
Author(s): V. A. G. Rivera; F. A. Ferri; J. L. Clabel H.; M. K. Kawamura; M. A. Pereira-da-Silva; L. A. O. Nunes; M. Siu Li; E. Marega
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Paper Abstract

High crystalline quality erbium-doped zirconium oxide films were deposited on Si(100) by electron beam evaporation in high vacuum. Characteristics of light emission in the telecommunication window from erbium oxide crystal zirconium oxide films were investigated before and after furnace annealing in oxygen atmosphere. The luminescence intensity of the erbium-doped thin film after annealing at 900 °C was 18 times higher than those before thermal annealing. Also, it was observed a decrease in the intensity of luminescence and the 4I13/2 lifetime with the increase of the erbium concentration, which was analyzed via energy transfer - quenching. The structure environment of the erbium ion in the thin film before and after annealing has been studied by X-ray diffraction. The surface morphology of the films as a function of the annealing temperature and atmosphere showed a significant change.

Paper Details

Date Published: 11 March 2013
PDF: 9 pages
Proc. SPIE 8621, Optical Components and Materials X, 86211K (11 March 2013); doi: 10.1117/12.2004783
Show Author Affiliations
V. A. G. Rivera, Univ. de São Paulo (Brazil)
F. A. Ferri, Univ. de São Paulo (Brazil)
J. L. Clabel H., Univ. Federal de São Carlos (Brazil)
M. K. Kawamura, Univ. de São Paulo (Brazil)
M. A. Pereira-da-Silva, Univ. de São Paulo (Brazil)
Centro Univ. Central Paulista, São Carlos (Brazil)
L. A. O. Nunes, Univ. de São Paulo (Brazil)
M. Siu Li, Univ. de São Paulo (Brazil)
E. Marega, Univ. de São Paulo (Brazil)

Published in SPIE Proceedings Vol. 8621:
Optical Components and Materials X
Michel J. F. Digonnet; Shibin Jiang; J. Christopher Dries, Editor(s)

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