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Proceedings Paper

Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: toward ultrahigh efficiency phosphor-free white light emitting diodes
Author(s): Zetian Mi; Hieu Pham Trung Nguyen; Shaofei Zhang; Kai Cui; Mehrdad Djavid
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Paper Abstract

One of the grand challenges for future solid state lighting is the development of high efficiency, phosphor-free white light emitting diodes (LEDs). In this context, we have investigated the molecular beam epitaxial growth and characterization of nanowire LEDs on Si, wherein intrinsic white-light emission is achieved by incorporating selforganized InGaN quantum dots in defect-free GaN nanowires on a single chip. We have further demonstrated that, with the incorporation of p-type modulation doping and AlGaN electron blocking layer, InGaN/GaN dot-in-a-wire white LEDs can exhibit nearly zero efficiency droop and significantly enhanced internal quantum efficiency (up to ~57%) at room-temperature.

Paper Details

Date Published: 29 March 2013
PDF: 8 pages
Proc. SPIE 8634, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X, 86340B (29 March 2013); doi: 10.1117/12.2004498
Show Author Affiliations
Zetian Mi, McGill Univ. (Canada)
Hieu Pham Trung Nguyen, McGill Univ. (Canada)
Shaofei Zhang, McGill Univ. (Canada)
Kai Cui, McGill Univ. (Canada)
Mehrdad Djavid, McGill Univ. (Canada)


Published in SPIE Proceedings Vol. 8634:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X
Kurt G. Eyink; Diana L. Huffaker; Frank Szmulowicz, Editor(s)

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