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Proceedings Paper

Passive mode-locking in the cavity of monolithic GaN-based multi-section laser diodes
Author(s): Thomas Weig; Ulrich T. Schwarz; Luca Sulmoni; Jean-Michel Lamy; Jean-François Carlin; Nicolas Grandjean; Dmitri Boiko
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Paper Abstract

We demonstrate picosecond pulse generation in the blue-violet wavelength region by passive intra-cavity mode-locking in GaN-based ridge waveguide laser diodes with monolithically integrated absorbers. For cavity lengths of 1.2 and 0.6 mm we observe repetition frequencies of 40 and 90 GHz, and pulse lengths of 7 and 4 ps, respectively. The results are explained by an extremely short, tunneling dominated carrier life time in the saturable absorber at high negative bias. The fast depletion of the charge carriers in the absorber is investigated by bias-dependent life-time measurements in the absorber.

Paper Details

Date Published: 4 March 2013
PDF: 9 pages
Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 86400H (4 March 2013); doi: 10.1117/12.2004483
Show Author Affiliations
Thomas Weig, Fraunhofer Institute for Applied Solid State Physics (Germany)
Ulrich T. Schwarz, Fraunhofer Institute for Applied Solid State Physics (Germany)
Univ. of Freiburg (Germany)
Luca Sulmoni, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Jean-Michel Lamy, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Jean-François Carlin, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Nicolas Grandjean, Ecole Polytechnique Fédérale de Lausanne (Switzerland)
Dmitri Boiko, Ctr. Suisse d’Electronique et de Microtechnique (Switzerland)

Published in SPIE Proceedings Vol. 8640:
Novel In-Plane Semiconductor Lasers XII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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