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Proceedings Paper

Hydrothermal growth and characterization of aluminum-doped ZnO bulk crystals
Author(s): Buguo Wang; Matthew Mann; Bruce Claflin; Michael Snure; David C. Look
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Paper Abstract

Bulk ZnO crystals were grown by the hydrothermal technique with Al2O3 added to the solution in an attempt to obtain Al-doped ZnO crystals. Aluminum and indium co-doped ZnO were also grown by the same technique. Adding Al2O3 to the growth solution has a significant impact on the ZnO growth ⎯ either preventing overgrowth and dissolving the seed growth or degrading the crystalline quality; nevertheless, the resulting crystals of both Al:ZnO and Al/In:ZnO are highly conductive, similar to In and Ga doped ZnO crystals, with a resistivity approaching 0.01 Ω cm, as revealed by temperature-dependent Hall-effect measurements. Photoluminescence spectra at 18 K show Al0-bound-exciton peak energies of 3.3604 eV on the Zn face and 3.3609 eV on the O face for the Al-doped ZnO crystals. Similarly both an Al0- bound-exciton peak at 3.3604 eV and an In0-bound-exciton peak at 3.3575 eV were found on the Al/In-co-doped crystals. The electrical properties of all group III doped ZnO crystals grown hydrothermally are compared with each other and with Al:ZnO obtained by other growth methods.

Paper Details

Date Published: 18 March 2013
PDF: 7 pages
Proc. SPIE 8626, Oxide-based Materials and Devices IV, 862609 (18 March 2013); doi: 10.1117/12.2004460
Show Author Affiliations
Buguo Wang, Solid State Scientific Corp. (United States)
Air Force Research Lab. (United States)
Matthew Mann, Air Force Research Lab. (United States)
Bruce Claflin, Air Force Research Lab. (United States)
Michael Snure, Air Force Research Lab. (United States)
David C. Look, Air Force Research Lab. (United States)
Wright State Univ. (United States)
Wyle Labs., Inc. (United States)


Published in SPIE Proceedings Vol. 8626:
Oxide-based Materials and Devices IV
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

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