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Proceedings Paper

Semiconductor source of entangled photons at room temperature
Author(s): A. Orieux; A. Eckstein; A. Lemaître; P. Filloux; T. Coudreau; P. Milman; A. Keller; I. Favero; G. Leo; S. Ducci
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Paper Abstract

In recent years, great efforts have been devoted to the miniaturization of quantum information technology on semiconductor chips. In the context of photon pair sources, the bi-exciton cascade of a quantum dot and the four wave mixing in a Silicon waveguide have been used to demonstrate the generation of entangled states. Spontaneous parametric down-conversion in III-V semiconductor waveguides combines the advantages of room temperature and telecom wavelength operation, while keeping open the possibility of electrically pumping of the device. Here we present a source consisting of a multilayer AlGaAs waveguide grown on a GaAs substrate and then chemically etched to achieve lateral confinement in a ridge. The structure design is such that a pump beam (around 759 nm), impinging on the waveguide surface with an incidence angle θ generates two counterpropagating orthogonally polarized beams (around 1518 nm). The waveguide core is surrounded by distributed Bragg reectors to enhance the pump field within the device. We demonstrate the direct emission of polarization entangled photons by pumping the device at two symmetric angles of incidence corresponding to frequency degeneracy and performing a quantum tomography measurement. Most common entanglement witnesses are satisfied and a raw fidelity of F = 0:86 to a Bell state is obtained. These results open the route to the demonstration of other interesting features of our device such as the generation of hyper-entangled states via the control of the frequency correlation degree through the spatial and spectral pump beam profile, leading to a new generation of completely integrated devices for quantum information.

Paper Details

Date Published: 29 March 2013
PDF: 6 pages
Proc. SPIE 8635, Advances in Photonics of Quantum Computing, Memory, and Communication VI, 863519 (29 March 2013); doi: 10.1117/12.2004267
Show Author Affiliations
A. Orieux, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris 7-Denis Diderot (France)
A. Eckstein, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris 7-Denis Diderot (France)
A. Lemaître, Lab. de Photonique et de Nanostructures, CNRS (France)
P. Filloux, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris 7-Denis Diderot (France)
T. Coudreau, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris 7-Denis Diderot (France)
P. Milman, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris 7-Denis Diderot (France)
A. Keller, Institut des Sciences Moléculaires d'Orsay, CNRS, Univ. Paris-Sud 11 (France)
I. Favero, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris 7-Denis Diderot (France)
G. Leo, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris 7-Denis Diderot (France)
S. Ducci, Lab. Matériaux et Phénomènes Quantiques, CNRS, Univ. Paris 7-Denis Diderot (France)


Published in SPIE Proceedings Vol. 8635:
Advances in Photonics of Quantum Computing, Memory, and Communication VI
Zameer U. Hasan; Philip R. Hemmer; Hwang Lee; Charles M. Santori, Editor(s)

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