Share Email Print
cover

Proceedings Paper

Nanolithography for 3-dimentional nanostructures: enhancement of light output power in vertical light emitting diodes
Author(s): Yang Hee Song; Jun Ho Son; Buem Joon Kim; Jong-Lam Lee
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We review the recent developments to enhance the external quantum efficiency (EQE) in GaN based vertical light-emitting diodes (V-LEDs). The controlling of side-wall angle by SiO2 nanosphere lithography significantly improved the light extraction efficiency (LEE) of V-LEDs; this result is 6% higher than the photo chemical etching (PCE) method, which is known to have the highest light extraction, and 300% higher than flat surface V-LEDs. Nanostructured V-LEDs with a very dense forest of vertically aligned ZnO nanowires on the surface of N-face n-GaN induce the dramtic improvement in LEE. The structural transformation at the nanolevel by the UV radiation and Ozone (UV-O) treatment contributes the high density of Zn seed on GaN, and then this approach shows an extreme enhancement in LEE (>2.8x) compared to flat V-LEDs. The enhanced LEE was also demonstrated by depositing a spontaneously formed MgO nano-pyramids and ZnO refractive-index modulation layer on the surface of V-LEDs, resulting in the increase of output power by 49 %, comparing with the V-LEDs with a flat n-GaN surface. The enhancement of light output power by the nanotexturing of n-face n-GaN was remarkably influenced by 3-dimentional nanostructures.

Paper Details

Date Published: 4 March 2013
PDF: 6 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250R (4 March 2013); doi: 10.1117/12.2004038
Show Author Affiliations
Yang Hee Song, Pohang Univ. of Science and Technology (Korea, Republic of)
Jun Ho Son, Pohang Univ. of Science and Technology (Korea, Republic of)
Buem Joon Kim, Pohang Univ. of Science and Technology (Korea, Republic of)
Jong-Lam Lee, Pohang Univ. of Science and Technology (Korea, Republic of)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

© SPIE. Terms of Use
Back to Top