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Proceedings Paper

Low resistivity electrical contacting of porous n-type GaN layers due to reduced workfunction intermetallic seed layers
Author(s): Oleksandr V. Bilousov; Joan J. Carvajal; Colm O'Dwyer; Xavier Mateos; Francesc Díaz; Magdalena Aguiló
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Paper Abstract

Porous GaN crystals have been grown on Pt- and Au- coated silicon substrates as porous crystals and as porous layers. By the direct reaction of metallic Ga and NH3 gas in a CVD system, intermetallic metal-Ga alloys formed at the interface allow the seeding and growth of porous GaN by vapor-solid-solid processes. Current-voltage and capacitance-voltage measurements confirm that the intermetallic seed layers result in near-ohmic contacts to porous n-GaN with low contact resistivities.

Paper Details

Date Published: 4 March 2013
PDF: 9 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250T (4 March 2013); doi: 10.1117/12.2003949
Show Author Affiliations
Oleksandr V. Bilousov, Univ. Rovira i Virgili (Spain)
Joan J. Carvajal, Univ. Rovira i Virgili (Spain)
Colm O'Dwyer, Univ. College Cork (Ireland)
Tyndall National Inst. (Ireland)
Xavier Mateos, Univ. Rovira i Virgili (Spain)
Francesc Díaz, Univ. Rovira i Virgili (Spain)
Magdalena Aguiló, Univ. Rovira i Virgili (Spain)

Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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