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Proceedings Paper

ZnO nanowire-based light-emitting diodes with tunable emission from near-UV to blue
Author(s): Thierry Pauporté; Oleg Lupan; Bruno Viana; T. le Bahers
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Paper Abstract

Nanowires (NWs)-based light emitting diodes (LEDs) have drawn large interest due to many advantages compared to thin film based devices. We have successfully prepared epitaxial n-ZnO(NW)/p-GaN heterojunctions using low temperature soft electrochemical techniques. The structures have been used in LED devices and exhibited highly interesting performances. Moreover, the bandgap of ZnO has been tuned by Cu or Cd doping at controlled atomic concentration. A result was the controlled shift of the LED emission in the visible spectral wavelength region. Using DFT computing calculations, we have also shown that the bandgap narrowing has two different origins for Zn1-xCdxO (ZnO:Cd) and ZnO:Cu. In the first case, it is due to the crystal lattice expansion, whereas in the second case Cu-3d donor and Cu-3d combined to O-2p acceptor bands appear in the bandgap which broadnesses increase with the dopant concentration. This leads to the bandgap reduction.

Paper Details

Date Published: 4 March 2013
PDF: 6 pages
Proc. SPIE 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII, 86410L (4 March 2013); doi: 10.1117/12.2003906
Show Author Affiliations
Thierry Pauporté, Lab. d’Électrochimie, CNRS, ENSCP-Chimie-Paristech 11 (France)
Oleg Lupan, Lab. d’Électrochimie, CNRS, ENSCP-Chimie-Paristech 11 (France)
Bruno Viana, LCMCP, ENSCP-Chimie-Paristech 11 (France)
T. le Bahers, Lab. d’Électrochimie, CNRS, ENSCP-Chimie-Paristech 11 (France)


Published in SPIE Proceedings Vol. 8641:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg, Editor(s)

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