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Proceedings Paper

Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy
Author(s): Henryk Turski; Marcin Siekacz; Marta Sawicka; Zbig R. Wasilewski; Sylwester Porowski; Czesław Skierbiszewski
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Paper Abstract

In this work we study the growth mechanisms of InGaN in plasma-assisted molecular beam epitaxy (PAMBE). We investigate growth of InGaN layers on vicinal GaN (0001) substrates. Indium incorporation as a function of gallium and nitrogen fluxes was examined. We propose microscopic model of InGaN growth by PAMBE postulating different indium adatom incorporation mechanisms on two nonequivalent atomic step edges of wurtzite crystal. The different roles of gallium and nitrogen fluxes during the growth of InGaN layers is discussed.

Paper Details

Date Published: 27 March 2013
PDF: 9 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862527 (27 March 2013); doi: 10.1117/12.2003850
Show Author Affiliations
Henryk Turski, Institute of High Pressure Physics (Poland)
Marcin Siekacz, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Marta Sawicka, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Zbig R. Wasilewski, Univ. of Waterloo (Canada)
Sylwester Porowski, Institute of High Pressure Physics (Poland)
Czesław Skierbiszewski, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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