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Proceedings Paper

Polarization engineering in III-nitride based ultraviolet light-emitting diodes
Author(s): Yu-Rui Lin; Bo-Ting Liou; Jih-Yuan Chang; Yen-Kuang Kuo
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Paper Abstract

In this study, the polarization effect in III-nitride based ultraviolet (UV) light-emitting diodes (LEDs) has been investigated theoretically. Some specific designs in active region are proposed to reduce the polarization effect and, hence, improve the device performance. Simulation results show that by utilizing properly designed quaternary AlInGaN material in active region, the hole injection efficiency can be enhanced due to the reduction of polarization mismatch between hetero-layers. On the other hand, the electron leakage is suppressed owing to that the effective potential height for electrons is increased. Therefore, the performance of UV LEDs is significantly improved by the polarization engineering in active region.

Paper Details

Date Published: 14 March 2013
PDF: 6 pages
Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 86191V (14 March 2013); doi: 10.1117/12.2003779
Show Author Affiliations
Yu-Rui Lin, National Changhua Univ. of Education (Taiwan)
Bo-Ting Liou, Hsiuping Univ. of Science and Technology (Taiwan)
Jih-Yuan Chang, National Changhua Univ. of Education (Taiwan)
Yen-Kuang Kuo, National Changhua Univ. of Education (Taiwan)


Published in SPIE Proceedings Vol. 8619:
Physics and Simulation of Optoelectronic Devices XXI
Bernd Witzigmann; Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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