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Proceedings Paper

Numerical investigation on the structural characteristics of GaN/InGaN solar cells
Author(s): Yen-Kuang Kuo; Jih-Yuan Chang; Shih-Hsun Yen
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Paper Abstract

In traditional III-nitride solar cells, the polarization-induced charges and potential barrier in the hetero-interfaces are demonstrated to be harmful for carrier collection. To solve these challenges, the elimination or mitigation of the abrupt hetero-interfaces should be efficient. In this study, various kinds of solar cell structures are investigated numerically. The structures under various situations of indium composition and degree of polarization are systematically explored. Specifically, the photovoltaic performance, energy band diagrams, electrostatic fields, and recombination rates are analyzed. Then, according to the simulation results, the appropriate solar cell structure which possesses high conversion efficiency is proposed.

Paper Details

Date Published: 25 March 2013
PDF: 8 pages
Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 862021 (25 March 2013); doi: 10.1117/12.2003716
Show Author Affiliations
Yen-Kuang Kuo, National Changhua Univ. of Education (Taiwan)
Jih-Yuan Chang, National Changhua Univ. of Education (Taiwan)
Shih-Hsun Yen, National Changhua Univ. of Education (Taiwan)


Published in SPIE Proceedings Vol. 8620:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II
Alexandre Freundlich; Jean-Francois Guillemoles, Editor(s)

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