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Proceedings Paper

HVPE-GaN growth on ammonothermal GaN crystals
Author(s): Tomasz Sochacki; Mikolaj Amilusik; Boleslaw Lucznik; Michal Boćkowski; Janusz L. Weyher; Grzegorz Nowak; Bogdan Sadovyi; Grzegorz Kamler; Izabella Grzegory; Robert Kucharski; Marcin Zajac; Robert Doradzinski; Robert Dwilinski
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Paper Abstract

HVPE crystallization on ammonothermaly grown GaN crystals (A-GaN) is described. Preparation of the (0001) surface of the A-GaN crystals to the epi-ready state is presented. The HVPE initial growth conditions are determined and demonstrated. An influence of a thickness and a free carrier concentration in the initial substrate on quality and mode of growth by the HVPE is examined. Smooth GaN layers of excellent crystalline quality, without cracks, and with low dislocation density are obtained.

Paper Details

Date Published: 4 March 2013
PDF: 11 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250B (4 March 2013); doi: 10.1117/12.2003699
Show Author Affiliations
Tomasz Sochacki, Institute of High Pressure Physics (Poland)
TopGaN Sp. z o.o. (Poland)
Mikolaj Amilusik, Institute of High Pressure Physics (Poland)
TopGaN Sp. z o.o. (Poland)
Boleslaw Lucznik, Institute of High Pressure Physics (Poland)
TopGaN Sp. z o.o. (Poland)
Michal Boćkowski, Institute of High Pressure Physics (Poland)
TopGaN Sp. z o.o. (Poland)
Janusz L. Weyher, Institute of High Pressure Physics (Poland)
Grzegorz Nowak, Institute of High Pressure Physics (Poland)
Bogdan Sadovyi, Institute of High Pressure Physics (Poland)
Grzegorz Kamler, Institute of High Pressure Physics (Poland)
Izabella Grzegory, Institute of High Pressure Physics (Poland)
Robert Kucharski, Ammono S.A. (Poland)
Marcin Zajac, Ammono S.A. (Poland)
Robert Doradzinski, Ammono S.A. (Poland)
Robert Dwilinski, Ammono S.A. (Poland)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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