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Proceedings Paper

A novel pixel design with hybrid type isolation scheme for low dark current in CMOS image sensor
Author(s): Sung Ho Choi; Yi Tae Kim; Min Seok Oh; Young Hwan Park; Jeong Jin Cho; Young Heub Jang; Hyung Jun Han; Jong Won Choi; Ho Woo Park; Sang Il Jung; Hoon Sang Oh; Jung Chak Ahn; Hiroshige Goto; Chi Young Choi; Yonghan Roh
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Paper Abstract

New isolation scheme for CMOS image sensor pixel is proposed and its improved dark current performance is reported. It is well known that shallow trench isolation (STI) is one of major sources of dark current in imager pixel due to the existence of interfacial defects at STI/Si interface. On the account STI-free structure over the whole pixel area was previously reported for reducing dark current. As the size of pixel pitch is shrunk, however, it becomes increasingly difficult to isolate in-pixel transistors electrically without STI. In this work, we implemented hybrid type isolation scheme of removing STI around photodiode to suppress the dark current and remaining STI near transistors to guarantee the electrical isolation of transistors in pixel. It was successfully achieved that the dark current was significantly reduced by removing the STI around the photodiode together with normal operation of in-pixel transistors.

Paper Details

Date Published: 19 February 2013
PDF: 8 pages
Proc. SPIE 8659, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV, 86590F (19 February 2013); doi: 10.1117/12.2003697
Show Author Affiliations
Sung Ho Choi, Sungkyunkwan Univ. (Korea, Republic of)
SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Yi Tae Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Min Seok Oh, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Young Hwan Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jeong Jin Cho, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Young Heub Jang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hyung Jun Han, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jong Won Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Ho Woo Park, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sang Il Jung, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hoon Sang Oh, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jung Chak Ahn, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hiroshige Goto, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chi Young Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Yonghan Roh, Sungkyunkwan Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 8659:
Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV
Ralf Widenhorn; Antoine Dupret, Editor(s)

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