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Proceedings Paper

Indium-zinc oxide transparent electrode for nitride-based light-emitting diodes
Author(s): S. Mizutani; S. Nakashima; M. Iwaya; T. Takeuchi; S. Kamiyama; I. Akasaki; T. Kondo; F. Teramae; A. Suzuki; T. Kitano; M. Mori; M. Matsubara
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Paper Abstract

The basic properties of indium-zinc oxide (IZO) were investigated from the view point of the potential of light-emitting diodes (LEDs) for nanostructured transparent contact. The resistivity and contact resistance to p-GaN were obtained to be 2.5×10-4 Ωcm and 9.4×10-4 Ωcm2, respectively, which are comparable to those of indium-tin oxide (ITO). The light output of the LED with the moth-eye IZO was 10 % and 40 % higher than that of the LED with the moth-eye ITO and that of the LED without the moth-eye structure, respectively.

Paper Details

Date Published: 4 March 2013
PDF: 11 pages
Proc. SPIE 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII, 86411Y (4 March 2013); doi: 10.1117/12.2003536
Show Author Affiliations
S. Mizutani, Meijo Univ. (Japan)
S. Nakashima, Meijo Univ. (Japan)
M. Iwaya, Meijo Univ. (Japan)
T. Takeuchi, Meijo Univ. (Japan)
S. Kamiyama, Meijo Univ. (Japan)
EL-SEED Corp. (Japan)
I. Akasaki, Meijo Univ. (Japan)
T. Kondo, EL-SEED Corp. (Japan)
F. Teramae, EL-SEED Corp. (Japan)
A. Suzuki, EL-SEED Corp. (Japan)
T. Kitano, EL-SEED Corp. (Japan)
M. Mori, EL-SEED Corp. (Japan)
M. Matsubara, Idemitsu Kosan Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 8641:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg, Editor(s)

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