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Proceedings Paper

Dilute phosphide nitride materials as photocathodes for electrochemical solar energy conversion
Author(s): Vijay Parameshwaran; Xiaoqing Xu; Yangsen Kang; James Harris; H.-S. Philip Wong; Bruce Clemens
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Paper Abstract

Dilute nitride materials have been used in a variety of III-V photonic devices, but have not been significantly explored in photoelectrochemical applications. This work focuses on using dilute phosphide nitride materials of the form (Al,In)P1-xNx as photocathodes for the generation of hydrogen fuel from solar energy. Heteroepitaxial MOCVD growth of AlPN thin films on GaP yields high quality material with a direct bandgap energy of 2.218 eV. Aligned epitaxial growth of InP and GaP nanowires on InP and Si substrates, respectively, provides a template for designing nanostructured photocathodes over a large area. Electrochemical testing of a AlPN/GaP heterostructure electrode yields up to a sixfold increase in photocurrent enhancement under blue light illumination as compared to a GaP electrode. Additionally, the AlPN/GaP electrodes exhibit no degradation in performance after galvanostatic biasing over time. These results show that (Al,In)P1-xNx is a promising materials system for use in nanoscale photocathode structures.

Paper Details

Date Published: 25 March 2013
PDF: 9 pages
Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 86201J (25 March 2013); doi: 10.1117/12.2003486
Show Author Affiliations
Vijay Parameshwaran, Stanford Univ. (United States)
Xiaoqing Xu, Stanford Univ. (United States)
Yangsen Kang, Stanford Univ. (United States)
James Harris, Stanford Univ. (United States)
H.-S. Philip Wong, Stanford Univ. (United States)
Bruce Clemens, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 8620:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II
Alexandre Freundlich; Jean-Francois Guillemoles, Editor(s)

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