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Proceedings Paper

Analysis of bulk and facet failures in AlGaAs-based high-power diode lasers
Author(s): Jens W. Tomm; Martin Hempel; Fabio La Mattina; Frank M. Kießling; Thomas Elsaesser
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Paper Abstract

Mechanisms are addressed limiting the reliability high-power diode lasers. An overview is given on the kinetics of the Catastrophic Optical Damage (COD) process, which is related to highest output powers. It involves fast defect growth fed by re-absorption of laser light. Local temperatures reach the order of the melting temperature of the waveguide of the device. The process starts either at a facet or at any weak point, e.g., at extended defects in the interior of the cavity.

Paper Details

Date Published: 4 March 2013
PDF: 10 pages
Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 86401F (4 March 2013); doi: 10.1117/12.2003465
Show Author Affiliations
Jens W. Tomm, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Martin Hempel, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)
Fabio La Mattina, EMPA (Switzerland)
Frank M. Kießling, Leibniz-Institut für Kristallzüchtung (Germany)
Thomas Elsaesser, Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie (Germany)


Published in SPIE Proceedings Vol. 8640:
Novel In-Plane Semiconductor Lasers XII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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