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Proceedings Paper

Hybrid silicon organic high speed electro-optic phase shifter
Author(s): Soon Thor Lim; Maoqing Xin; Ching Eng Png; Vivek Dixit; Aaron J. Danner
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Paper Abstract

We study a hybrid silicon organic high speed electro-optic phase shifter based on polymer infiltrated P-S-N (“S” refers to the slot) diode capacitor structure. This optical phase shift is realized based on index perturbation both inside the slot via Pockels nonlinearity and within the silicon ridges via the free carrier effect (carrier depletion). The combination of the polymer diode capacitor configuration with the low aspect ratio slot waveguide system leads to a promising method of constructing sub-THz speed optical modulators without sacrificing either modulation efficiency or energy consumption. By optimizing the waveguide geometry in terms of balancing effective index shift and device speed, at least 269 GHz bandwidth can be achieved with a high modulation efficiency of 5.5 V-cm when the diode capacitor is reverse biased by an external radio frequency (RF) voltage signal between the electrodes (optical propagation loss is acceptably low at 4.29 dB).

Paper Details

Date Published: 14 March 2013
PDF: 4 pages
Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 86191K (14 March 2013); doi: 10.1117/12.2003397
Show Author Affiliations
Soon Thor Lim, A*STAR Institute of High Performance Computing (Singapore)
Maoqing Xin, A*STAR Institute of High Performance Computing (Singapore)
National Univ. of Singapore (Singapore)
Ching Eng Png, A*STAR Institute of High Performance Computing (Singapore)
Vivek Dixit, A*STAR Institute of High Performance Computing (Singapore)
Aaron J. Danner, A*STAR Institute of High Performance Computing (Singapore)
National Univ. of Singapore (Singapore)


Published in SPIE Proceedings Vol. 8619:
Physics and Simulation of Optoelectronic Devices XXI
Bernd Witzigmann; Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

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