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Proceedings Paper

Ohmic contacts to n-type GaSb grown on GaAs by the interfacial misfit dislocation technique
Author(s): N. Rahimi; A. A. Aragon; O. S. Romero; D. M. Kim; N. B. J. Traynor; T. J. Rotter; G. Balakrishnan; S. D. Mukherjee; L. F. Lester
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Paper Abstract

Low resistance ohmic contacts have been successfully fabricated on n-GaSb layers grown by MBE on semi-insulating (SI) GaAs substrates using the Interfacial Misfit Dislocation (IMF) technique. Although intended for photovoltaic applications, the results are applicable to many antimonide-based devices. The IMF technique enables the growth of epitaxial GaSb layers on semi-insulating GaAs substrates resulting in vertical current confinement not possible on unintentionally doped ~ 1e17 cm-3 p-doped bulk GaSb. Results for low resistance ohmic contacts using NiGeAu, PdGeAu, GeAuNi and GeAuPd metallizations for various temperatures are reported. Specific transfer resistances down to 0.12 Ω-mm and specific contact resistances of < 2e-6 Ω-cm2 have been observed.

Paper Details

Date Published: 25 March 2013
PDF: 12 pages
Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 86201K (25 March 2013); doi: 10.1117/12.2003392
Show Author Affiliations
N. Rahimi, The Univ. of New Mexico (United States)
A. A. Aragon, The Univ. of New Mexico (United States)
O. S. Romero, The Univ. of New Mexico (United States)
D. M. Kim, Virginia Polytechnic Institute and State Univ. (United States)
N. B. J. Traynor, SUNY Geneseo (United States)
T. J. Rotter, The Univ. of New Mexico (United States)
G. Balakrishnan, The Univ. of New Mexico (United States)
S. D. Mukherjee, The Univ. of New Mexico (United States)
L. F. Lester, The Univ. of New Mexico (United States)


Published in SPIE Proceedings Vol. 8620:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II
Alexandre Freundlich; Jean-Francois Guillemoles, Editor(s)

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