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Proceedings Paper

Improve GaAs solar cells efficiency by using high-transmittance textured PDMS film
Author(s): H. V. Han; H. C. Chen; C. C. Lin; Y. L. Tsai; H. C. Kuo; Peichen Yu
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Paper Abstract

We demonstrate the GaAs solar cells which utilize the high-transmittance textured polydimethylsiloxane (PDMS) film can outstanding increase the short circuit current density and power conversion efficiency of solar cells. The transmittance of PDMS film is exceeded 90%, which can pass through almost all the light of GaAs Solar cells can be absorbed. We used a special imprint technology to let the PDMS film possess a highly textured surface. Then we measured the characteristics of textured PDMS film and found out that it has a very excellent Haze performance. The effect of flexible textured PDMS film on the suppression of surface reflection in GaAs solar cells is also investigated. The presented technology provides an inexpensive surface anti-reflection process, which can potentially replace typically complex anti-reflection coating (ARC) layer. The GaAs solar cells with textured PDMS layer can effectively enhance the short-circuit current density from 22.91 to 26.54 mA/cm2 and the power conversion efficiency from 18.28 to 21.43 %, corresponding to a 17 % enhancement compared to the one without textured PDMS. The open-circuit voltage (Voc) and the fill-factor (FF) of GaAs solar cells exhibit negligible change, because the textured PDMS film was pasted up on the surface of GaAs solar cells and did not interfere with the diode operation. At the same time, we observed through the EQE measurement that the textured PDMS film not only proved wonderful light scattering effect but also generated more electron-hole pairs in all absorption spectrum range. Finally, through this simple PDMS process, we believe this technology shall be a great candidate for next generation of highly efficient and low-cost photovoltaic devices.

Paper Details

Date Published: 25 March 2013
PDF: 6 pages
Proc. SPIE 8620, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II, 86201V (25 March 2013); doi: 10.1117/12.2003127
Show Author Affiliations
H. V. Han, National Chiao Tung Univ. (Taiwan)
H. C. Chen, National Chiao Tung Univ. (Taiwan)
C. C. Lin, National Chiao Tung Univ. (Taiwan)
Y. L. Tsai, National Chiao Tung Univ. (Taiwan)
H. C. Kuo, National Chiao Tung Univ. (Taiwan)
Peichen Yu, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 8620:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices II
Alexandre Freundlich; Jean-Francois Guillemoles, Editor(s)

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