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Proceedings Paper

Electron spin relaxation dynamics in GaN: influence of temperature, doping density, and crystal orientation
Author(s): J. H. Buß; J. Rudolph; S. Starosielec; A. Schaefer; F. Semond; D. Hägele
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Paper Abstract

We present a systematic study of electron spin relaxation in wurtzite GaN. Fast relaxation is caused by a Rashba effective magnetic field that linearly depends on the electron momentum k. The field prevents spin lifetimes to exceed 50 ps at room temperature and is the origin of an anisotropic spin relaxation tensor that we evidence by magnetic field dependent magneto-optical pump-probe measurements. In addition, the spin lifetime depends - as compared to GaAs - weaker on temperature and doping density. We give a fully analytical description of both effects based on D'yakonov-Perel' theory that describes our results quantitatively without any fitting parameter.

Paper Details

Date Published: 14 March 2013
PDF: 8 pages
Proc. SPIE 8623, Ultrafast Phenomena and Nanophotonics XVII, 86230B (14 March 2013); doi: 10.1117/12.2003007
Show Author Affiliations
J. H. Buß, Ruhr-Univ. Bochum (Germany)
J. Rudolph, Ruhr-Univ. Bochum (Germany)
S. Starosielec, Ruhr-Univ. Bochum (Germany)
A. Schaefer, Ruhr-Univ. Bochum (Germany)
F. Semond, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications, CNRS (France)
D. Hägele, Ruhr-Univ. Bochum (Germany)


Published in SPIE Proceedings Vol. 8623:
Ultrafast Phenomena and Nanophotonics XVII
Markus Betz; Abdulhakem Y. Elezzabi; Jin-Joo Song; Kong-Thon Tsen, Editor(s)

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