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Proceedings Paper

20.8W TM polarized GaAsP laser diodes of 808nm wavelength
Author(s): Peixu Li; Kai Jiang; Xin Zhang; Qingmin Tang; Wei Xia; Shuqiang Li; Zhongxiang Ren; Xiangang Xu
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Paper Abstract

In this paper, we present a high power TM Polarized GaAsP laser diode of 808nm wavelength. For high power and narrow beam divergence, an asymmetry broad waveguide structure and a tensile strained GaAsP quantum well were used and the epilayers were grown by low-pressure metalorganic chemical vapor deposition. We have obtained an optical power of 20.86W at 20A without COMD and the vertical farfield of 27°. It is expected that Al-free GaAsP quantum well laser diodes will have good reliability without any facet treatment.

Paper Details

Date Published: 26 February 2013
PDF: 5 pages
Proc. SPIE 8605, High-Power Diode Laser Technology and Applications XI, 860510 (26 February 2013); doi: 10.1117/12.2002983
Show Author Affiliations
Peixu Li, Shandong Huaguang Optoelectronics Co., Ltd. (China)
Shandong Univ. (China)
Kai Jiang, Shandong Huaguang Optoelectronics Co., Ltd. (China)
Shandong Univ. (China)
Xin Zhang, Shandong Huaguang Optoelectronics Co., Ltd. (China)
Qingmin Tang, Shandong Huaguang Optoelectronics Co., Ltd. (China)
Wei Xia, Shandong Huaguang Optoelectronics Co., Ltd. (China)
Shandong Univ. (China)
Shuqiang Li, Shandong Huaguang Optoelectronics Co., Ltd. (China)
Shandong Univ. (China)
Zhongxiang Ren, Shandong Huaguang Optoelectronics Co., Ltd (China)
Xiangang Xu, Shandong Huaguang Optoelectronics Co., Ltd (China)
Shandong Univ. (China)


Published in SPIE Proceedings Vol. 8605:
High-Power Diode Laser Technology and Applications XI
Mark S. Zediker, Editor(s)

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