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Proceedings Paper

NiO as hole transport layers for all-inorganic quantum dot LEDs
Author(s): L. Y. Tang; X. L. Zhang; H. T. Dai; J. L. Zhao; S. G. Wang; X. W. Sun
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Paper Abstract

Quantum dot light-emitting diodes (QD-LEDs) have recently attracted much attention due to its highly saturated emission color and the capability of tuning the emission color by means of engineering its size. In this letter, an allinorganic light-emitting diode based on colloidal core/shell CdS/ZnS nanocrystal quantum dots (QDs) emissive layer sandwiched between p-type NiO and n-type ZnO is reported. NiO and ZnO layers are deposited by means of the lowcost spin coating technique. The device showed a rectification behavior and QD light emission with the electroluminescent emissions at 605nm.

Paper Details

Date Published: 4 March 2013
PDF: 6 pages
Proc. SPIE 8641, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII, 86410H (4 March 2013); doi: 10.1117/12.2002896
Show Author Affiliations
L. Y. Tang, Tianjin Univ. (China)
X. L. Zhang, Tianjin Univ. (China)
H. T. Dai, Tianjin Univ. (China)
J. L. Zhao, Tianjin Univ. (China)
Shanghai Juntech Co. Ltd. (China)
S. G. Wang, Tianjin Univ. (China)
X. W. Sun, South Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 8641:
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII
Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg, Editor(s)

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