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Proceedings Paper

Nonradiative recombination due to point defects in GaInN/GaN quantum wells induced by Ar implantation
Author(s): Torsten Langer; Hans-Georg Pietscher; Heiko Bremers; Uwe Rossow; Dirk Menzel; Andreas Hangleiter
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Paper Abstract

In this contribution, we quantitatively investigate nonradiative recombination due to argon implantation induced point defects in GaInN/GaN quantum wells via time-resolved photoluminescence spectroscopy. A significant reduction of carrier lifetimes in the QW is observed already for implantation doses of 1 × 1011 cm-2 and higher due to nonradiative recombination at implantation defects. These new nonradiative processes exhibit thermal activation energies below 40 meV, therefore being a dominant loss mechanism at room temperature. The thermal stability of the defects has been analyzed using rapid thermal annealing (RTA) at 800°C and 850°C. We find a partial recovery of the nonradiative lifetimes after RTA indicating an elimination of some defects.

Paper Details

Date Published: 27 March 2013
PDF: 7 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862522 (27 March 2013); doi: 10.1117/12.2002843
Show Author Affiliations
Torsten Langer, Technische Univ. Braunschweig (Germany)
Hans-Georg Pietscher, Technische Univ. Braunschweig (Germany)
Heiko Bremers, Technische Univ. Braunschweig (Germany)
Uwe Rossow, Technische Univ. Braunschweig (Germany)
Dirk Menzel, Technische Univ. Braunschweig (Germany)
Andreas Hangleiter, Technische Univ. Braunschweig (Germany)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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