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Proceedings Paper

Fabrication of high-efficiency heterogeneous Si/III-V integration with short optical vertical interconnect access
Author(s): Doris K. T. Ng; Jing Pu; Qian Wang; Kim-Peng Lim; Yongqiang Wei; Yadong Wang; Yicheng Lai; Seng-Tiong Ho
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Paper Abstract

Silicon nanophotonic platform based on a silicon-on-insulator substrate enables dense photonic integration due to transparency for light propagation and ultra-high refractive index contrast for light confinement. Here, we integrate silicon together with III-V for high-efficiency heterogeneous Silicon/III-V and short vertical optical interconnect access. The fabrication involves 3 critical processes: 1) obtaining more than 80% maximum bonded areas of Si with III-V, 2) precise alignment of III-V nano-devices on top of the passive devices and 3) vertical sidewall etch profile of Si and III-V devices. The measurement results show around 90% coupling efficiency. The realization of this heterogeneous Si/III-V integration platform will open up enormous opportunities for photonic system on silicon through integrating various devices.

Paper Details

Date Published: 6 March 2013
PDF: 5 pages
Proc. SPIE 8628, Optoelectronic Integrated Circuits XV, 86280M (6 March 2013); doi: 10.1117/12.2002786
Show Author Affiliations
Doris K. T. Ng, A*STAR - Data Storage Institute (Singapore)
Jing Pu, A*STAR - Data Storage Institute (Singapore)
Qian Wang, A*STAR - Data Storage Institute (Singapore)
Kim-Peng Lim, A*STAR - Data Storage Institute (Singapore)
Yongqiang Wei, A*STAR - Data Storage Institute (Singapore)
Yadong Wang, A*STAR - Data Storage Institute (Singapore)
Yicheng Lai, A*STAR - Data Storage Institute (Singapore)
Seng-Tiong Ho, A*STAR - Data Storage Institute (Singapore)
Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 8628:
Optoelectronic Integrated Circuits XV
Louay A. Eldada; El-Hang Lee, Editor(s)

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