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Proceedings Paper

Defects generation and annihilation in GaN grown on patterned silicon substrate
Author(s): N. Sawaki; S. Ito; T. Nakagita; H. Iwata; T. Tanikawa; M. Irie; Y. Honda; M. Yamaguchi; H. Amano
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Paper Abstract

The behavior of threading dislocations and stacking faults were investigated in a (1-101) GaN grown on a patterned (001)Si substrate by selective metal-organic-vapor-phase-epitaxy with an AlN buffer layer. Cross sectional transmission electron microscopy images showed that threading dislocations are generated at the hetero-interface of GaN/AlN/Si induced by misfit dislocations, while stacking faults are generated when two crystals with different crystal axes coalesce. We found some of them are annihilated making a loop, where two stacking faults have been generated at a short distance. This suggests a rout to decrease the density of stacking faults in III nitrides.

Paper Details

Date Published: 27 March 2013
PDF: 6 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250K (27 March 2013); doi: 10.1117/12.2002738
Show Author Affiliations
N. Sawaki, Aichi Institute of Technology (Japan)
S. Ito, Aichi Institute of Technology (Japan)
T. Nakagita, Aichi Institute of Technology (Japan)
H. Iwata, Aichi Institute of Technology (Japan)
T. Tanikawa, Nagoya Univ. (Japan)
M. Irie, Nagoya Univ. (Japan)
Y. Honda, Nagoya Univ. (Japan)
M. Yamaguchi, Nagoya Univ. (Japan)
H. Amano, Nagoya Univ. (Japan)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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