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Proceedings Paper

Multi-spectral InAs/GaAs-based quantum dot infrared photodetector with quaternary (InAlGaAs) capping operates at low bias voltage
Author(s): Sourav Adhikary; Subhananda Chakrabarti; Yigit Aytac; A.G.U. Perera
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Paper Abstract

The quantum dot infrared photodetector is an emerging technology for advanced imaging. Multi-color imaging technologies are favored as they extend the boundary of applications of the device. We report multi-spectral performance of MBE grown InGaAs/GaAs (device A) and InAs/GaAs (device B) based photodetector with In0.21Al0.21Ga0.58As capping at 77K. Spectral response measurement of device A shows the presence of a strong photoresponse at 10.2μm. Device B exhibits a four color response (5.7, 9.0, 14.5, 17 and 20 μm) over a broad range (5-20μm) at very low bias voltage.

Paper Details

Date Published: 29 March 2013
PDF: 5 pages
Proc. SPIE 8634, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X, 86340V (29 March 2013); doi: 10.1117/12.2002730
Show Author Affiliations
Sourav Adhikary, Indian Institute of Technology Bombay (India)
Subhananda Chakrabarti, Indian Institute of Technology Bombay (India)
Yigit Aytac, Georgia State Univ. (United States)
A.G.U. Perera, Georgia State Univ. (United States)


Published in SPIE Proceedings Vol. 8634:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling X
Kurt G. Eyink; Diana L. Huffaker; Frank Szmulowicz, Editor(s)

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