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Proceedings Paper

Thermal properties of InGaN laser diodes and arrays
Author(s): Szymon Stańczyk; Anna Kafar; Grzegorz Targowski; Przemek Wiśniewski; Irina Makarowa; Tadeusz Suski; Piotr Perlin
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Paper Abstract

Junction temperature of a laser diode (LD) determines the value of threshold current, maximum achievable power and device lifetime. In this work we studied this parameter by a method of comparing current-voltage characteristics measured under pulse bias (at various temperatures) with DC characteristic obtained at room temperature. As exemplary devices we chose various laser diode arrays and single emitter laser with different substrate thickness. The results show, that the primary factor determining thermal resistance of the device is the chip’s surface, which means, that a dominating mechanism is related with a heat transfer between the chip and the heat sink.

Paper Details

Date Published: 4 March 2013
PDF: 9 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862521 (4 March 2013); doi: 10.1117/12.2002494
Show Author Affiliations
Szymon Stańczyk, Institute of High Pressure Physics (Poland)
Anna Kafar, Institute of High Pressure Physics (Poland)
Grzegorz Targowski, TopGaN Ltd. (Poland)
Przemek Wiśniewski, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Irina Makarowa, TopGaN Ltd. (Poland)
Tadeusz Suski, Institute of High Pressure Physics (Poland)
Piotr Perlin, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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