Share Email Print
cover

Proceedings Paper

High optical power ultraviolet superluminescent InGaN diodes
Author(s): Anna Kafar; Szymon Stańczyk; Grzegorz Targowski; Robert Czernecki; Przemek Wiśniewski; Mike Leszczyński; Tadeusz Suski; Piotr Perlin
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We present ultraviolet InGaN superluminescent diodes fabricated in a “j-shape” waveguide geometry. Under CW operation at room temperatures, devices emit optical power up to 80 mW at 395 nm with no tendency for lasing. The chip length was 1.5 mm. Emitted optical power was very sensitive to the device temperature. This effect limited the maximum optical power obtained in CW operation. With better packaging scheme better performance in CW regime should be achieved.

Paper Details

Date Published: 4 March 2013
PDF: 7 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86251S (4 March 2013); doi: 10.1117/12.2002488
Show Author Affiliations
Anna Kafar, Institute of High Pressure Physics (Poland)
Szymon Stańczyk, Institute of High Pressure Physics (Poland)
Grzegorz Targowski, TopGaN Ltd. (Poland)
Robert Czernecki, TopGaN Ltd. (Poland)
Przemek Wiśniewski, Institute of High Pressure Physics (Poland)
Mike Leszczyński, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Tadeusz Suski, Institute of High Pressure Physics (Poland)
Piotr Perlin, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

© SPIE. Terms of Use
Back to Top