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Proceedings Paper

Sub-MHz linewidth of 633 nm diode lasers with internal surface DBR gratings
Author(s): D. Feise; G. Blume; J. Pohl; B. Sumpf; H. Thiem; M. Reggentin; J. Wiedmann; K. Paschke
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Paper Abstract

Red-emitting diode lasers having a large coherence length with a tunable wavelength and a narrow spectral linewidth with an emission power in the 10 mW range are sought for a variety of techniques in applications such as spectroscopy, interferometry and holography. Currently, helium-neon lasers or diode lasers with external wavelength stabilization are widely used for these applications. By integrating a wavelength selective element into the ridge waveguide (RW) of the diode laser chip itself a high degree of miniaturization and stability can be reached. To this end, we have developed RW lasers with deeply etched surface distributed Bragg reflector (DBR) gratings in order to achieve a high-yield, singleepitaxy manufacturing process. These DBR lasers consist of a 1.5 mm RW gain section and a 500 μm grating section, which has a reflectivity of about 60%. The facets of the lasers were coated to achieve a reflectivity of 30% at the front and smaller than 0.1% at the rear facet. The diode lasers achieve an optical output power of 20 mW at an injection current of 150 mA and a heat-sink temperature of 15°C at a wavelength of 633 nm. The DBR enables single longitudinal mode operation over a wide range of operation conditions. Self-delayed heterodyne measurements were performed to measure the emission linewidth of these lasers using a 1 km long fiber, which gives a spectral resolution of about 100 kHz. A linewidth of less than 1 MHz was obtained. In reliability tests at 14 mW a lifetime of more than 1,700 h could be demonstrated, dedicating these devices to the above mentioned applications.

Paper Details

Date Published: 4 March 2013
PDF: 9 pages
Proc. SPIE 8640, Novel In-Plane Semiconductor Lasers XII, 86400A (4 March 2013); doi: 10.1117/12.2002474
Show Author Affiliations
D. Feise, Ferdinand-Braun-Institut (Germany)
G. Blume, Ferdinand-Braun-Institut (Germany)
J. Pohl, Ferdinand-Braun-Institut (Germany)
B. Sumpf, Ferdinand-Braun-Institut (Germany)
H. Thiem, Eagleyard Photonics GmbH (Germany)
M. Reggentin, Eagleyard Photonics GmbH (Germany)
J. Wiedmann, Eagleyard Photonics GmbH (Germany)
K. Paschke, Ferdinand-Braun-Institut (Germany)


Published in SPIE Proceedings Vol. 8640:
Novel In-Plane Semiconductor Lasers XII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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