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Proceedings Paper

Study of photoresponsivity in optoelectronic devices based on single crystal β-Ga2O3 epitaxial layers
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Paper Abstract

Single crystal β-Ga2O3 epitaxial layers have been prepared on c-axis (0001) sapphire substrates using metalorganic chemical vapor deposition technique at relatively low temperature. Post-annealing of β-Ga2O3 single crystals up to 800 °C does not affect the crystallinity, explored by x-ray diffraction, showing that β-Ga2O3 epitaxial layers are highly (-201) oriented. Metal-semiconductor-metal devices are fabricated on single crystals to study their photoresponsivity. A significant improvement in performance of post annealed-based devices is observed, attributed to point defect reduction. Annealing of as-grown samples results to a significant decrease in both oxygen and gallium vacancies, which are sources of current leakage.

Paper Details

Date Published: 18 March 2013
PDF: 8 pages
Proc. SPIE 8626, Oxide-based Materials and Devices IV, 86260D (18 March 2013); doi: 10.1117/12.2002441
Show Author Affiliations
Ray-Hua Horng, National Chung Hsing Univ. (Taiwan)
National Cheng Kung Univ. (Taiwan)
Parvaneh Ravadgar, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 8626:
Oxide-based Materials and Devices IV
Ferechteh Hosseini Teherani; David C. Look; David J. Rogers, Editor(s)

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