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Proceedings Paper

High efficient InGaN blue light emitting diode with embedded nanoporous structure
Author(s): Wei-Chih Peng; Shih-Pang Chang; Ta-Cheng Hsu
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Paper Abstract

We report a highly efficient GaN-based blue light-emitting diodes (LEDs) structure with an emitting wavelength of 450nm on flat sapphire substrate by utilizing a nano-porous (NP) GaN insertion layer. Unlike the LED on patterned sapphire substrates (PSS), the presented substrate has a new morphology which not only can generate an embedded nano-dimensional void structure as a mirror layer to reflect the light from active layers for enhancing the light extraction, but can also easily enlarge the wafer size to a large scale, such as wafer diameter larger than 6 inches. With a chip size of 45 mil × 45 mil under a driving current of 350 mA, the light output powers of the NP GaN LEDs without and with encapsulation are 455 and 554 mW respectively. The light output power is improved about 2 -fold comparing to the LED on a flat sapphire substrate, and even comparable to the LED on PSS which all of them have a flat p-type GaN surface. The characterization and performance of this newly NP LED structure will be discussed in detail.

Paper Details

Date Published: 4 March 2013
PDF: 9 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250S (4 March 2013); doi: 10.1117/12.2002325
Show Author Affiliations
Wei-Chih Peng, Epistar Corp. (Taiwan)
Shih-Pang Chang, Epistar Corp. (Taiwan)
Ta-Cheng Hsu, Epistar Corp. (Taiwan)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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