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Proceedings Paper

High-power flip-chip-bonded silicon hybrid laser for temperature-control-free operation with micro-ring resonator-based modulator
Author(s): S. Tanaka; S.-H. Jeong; T. Akiyama; S. Sekiguchi; T. Kurahashi; Y. Tanaka; K. Morito
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Paper Abstract

A silicon (Si)-based, large-scale optical I/O chip will be a key device for a large-bandwidth, low-cost optical interconnection employed in future high-performance computing systems. For these Si optical I/O chips, a significant improvement in energy cost is strongly expected, hence, the use of micro ring-resonator (RR) based modulator is assumed to be a promising approach. In order to handle a narrow and temperature-dependent operation bandwidth of the RR-based modulator, we have proposed a novel Si transmitter that uses a cascaded RR MZ modulator and RR-based Si hybrid laser. The RR-based Si hybrid laser is an external cavity laser integrating an InP SOA and a Si mirror chip comprising a RR and DBR mirror. The SOA is flip-chip bonded to the Si mirror chip utilizing a precise flip-chip bonding technology. The fabricated Si hybrid laser exhibited a low threshold current of 9.4mA, a high output power of <15 mW, and a large wall-plug efficiency of 7.6% at 20°C. In addition, the device maintained a stable single longitudinal mode lasing and a low RIN level of <-130 dB/Hz for 20-60°C. We also fabricated an integrated Si transmitter combining a cascaded RR MZ modulator and RR-based Si hybrid laser. The 20-RR cascaded MZ modulator exhibited a 1-nm operation bandwidth using multiple low-Q RRs. The modulator was driven with 10Gbps PRBS signal. For a temperature range between 25 and 60°C, the lasing wavelength exhibited a red-shift of 2.5 nm, nevertheless, we confirmed clear eye openings without adjusting the operating wavelength of the modulator.

Paper Details

Date Published: 27 February 2013
PDF: 8 pages
Proc. SPIE 8630, Optoelectronic Interconnects XIII, 86300Q (27 February 2013); doi: 10.1117/12.2002280
Show Author Affiliations
S. Tanaka, Fujitsu Labs. Ltd. (Japan)
S.-H. Jeong, Fujitsu Labs. Ltd. (Japan)
T. Akiyama, Fujitsu Labs. Ltd. (Japan)
S. Sekiguchi, Fujitsu Labs. Ltd. (Japan)
T. Kurahashi, Fujitsu Labs. Ltd. (Japan)
Y. Tanaka, Fujitsu Labs. Ltd. (Japan)
K. Morito, Fujitsu Labs. Ltd. (Japan)


Published in SPIE Proceedings Vol. 8630:
Optoelectronic Interconnects XIII
Alexei L. Glebov; Ray T. Chen, Editor(s)

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