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Proceedings Paper

Role and influence of impurities on GaN crystal grown from liquid solution under high nitrogen pressure in multi-feed-seed configuration
Author(s): Michal Boćkowski; Boleslaw Lucznik; Tomasz Sochacki; Mikolaj Amilusik; Elzbieta Litwin-Staszewska; Ryszard Piotrzkowski; Izabella Grzegory
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Paper Abstract

Role and influence of impurities like: oxygen, indium and magnesium, on GaN crystals grown from liquid solution under high nitrogen pressure in multi-feed-seed configuration is shown. The properties of differently doped GaN crystals are presented. The crystallization method and the technology based on it (for obtaining high quality GaN substrates) are described in details. Some electronic and optoelectronic devices built on those GaN substrates are demonstrated.

Paper Details

Date Published: 4 March 2013
PDF: 12 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862509 (4 March 2013); doi: 10.1117/12.2002042
Show Author Affiliations
Michal Boćkowski, Institute of High Pressure Physics (Poland)
TopGaN Sp. z o.o. (Poland)
Boleslaw Lucznik, Institute of High Pressure Physics (Poland)
TopGaN Sp. z o.o. (Poland)
Tomasz Sochacki, Institute of High Pressure Physics (Poland)
TopGaN Sp. z o.o. (Poland)
Mikolaj Amilusik, Institute of High Pressure Physics (Poland)
TopGaN Sp. z o.o. (Poland)
Elzbieta Litwin-Staszewska, Institute of High Pressure Physics (Poland)
Ryszard Piotrzkowski, Institute of High Pressure Physics (Poland)
Izabella Grzegory, Institute of High Pressure Physics (Poland)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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