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Proceedings Paper

Tunable light source with GaN-based violet laser diode
Author(s): Masaki Omori; Naoki Mori; Norihiro Dejima
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Paper Abstract

GaN based violet Laser Diode has been applying for the industrial market with unique high potential characters. It has possibility Replacing Gas lasers, Dye Lasers, SHG lasers and Solid-state Lasers and more. Diode based laser extreme small and low costs at the high volume range. In addition GaN Laser has high quality with long lifetime and has possibility to cover the wide wavelength range as between 375 to 520nm. However, in general, diode based laser could only lase with Longitudinal Multi Mode. Therefore applicable application field should be limited and it was difficult to apply for the analysis. Recently, Single Longitudinal Mode laser with GaN diode has also be accomplished with external cavity by Nichia Corporation. External cavity laser achieved at least much higher than 20dB SMSR. The feature of installing laser is that Laser on the front facet with AR coating to avoid chip mode lasing. In general, external cavity laser has been required precision of mechanical assembly and Retention Capability. Nichia has gotten rid of the issue with Intelligence Cavity and YAG Laser welding assembly technique. This laser has also been installed unique feature that the longitudinal mode could be maintained to Single Mode lasing with installing internal functional sensors in the tunable laser.*1,*2 This tunable laser source could lock a particular wavelength optionally between 390 to 465nm wavelength range. As the results, researcher will have benefit own study and it will be generated new market with the laser in the near future.

Paper Details

Date Published: 4 March 2013
PDF: 8 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86251A (4 March 2013); doi: 10.1117/12.2002000
Show Author Affiliations
Masaki Omori, Nichia Corp. (Japan)
Naoki Mori, Nichia Corp. (Japan)
Norihiro Dejima, Nichia Corp. (Japan)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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