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Proceedings Paper

True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates
Author(s): Henryk Turski; Marcin Siekacz; Grzegorz Muzioł; Marta Sawicka; Szymon Grzanka; Piotr Perlin; Tadeusz Suski; Zbig R. Wasilewski; Izabella Grzegory; Sylwester Porowski; Czeslaw Skierbiszewski
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Paper Abstract

We present recent progress in the growth of nitride based laser diodes (LDs) made by Plasma Assisted Molecular Beam Epitaxy (PAMBE). In this work we demonstrate LDs grown by PAMBE operating in the range 450 – 460 nm. The LDs were grown on c-plane bulk GaN substrates with threading dislocation density (TDD) ranging from 103 cm-2 to 104 cm-2. The low TDD allowed us to fabricate cw LDs with the lifetime exceeding 2000 h at 10 mW of optical output power. The maximum output power for 3 LDs array in cw mode was 280 mW and 1W in pulse mode. The low temperature growth mode in PAMBE allow for growth of AlGaN-free LDs with high In content InGaN waveguides. The key element to achieve lasing wavelengths above 450 nm was the substantial increase of the nitrogen flux available during the growth by PAMBE.

Paper Details

Date Published: 4 March 2013
PDF: 6 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 862512 (4 March 2013); doi: 10.1117/12.2001997
Show Author Affiliations
Henryk Turski, Institute of High Pressure Physics (Poland)
Marcin Siekacz, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Grzegorz Muzioł, Institute of High Pressure Physics (Poland)
Marta Sawicka, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Szymon Grzanka, Institute of High Pressure Physics (Poland)
Piotr Perlin, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)
Tadeusz Suski, Institute of High Pressure Physics (Poland)
Zbig R. Wasilewski, The Univ. of Waterloo (Canada)
Izabella Grzegory, Institute of High Pressure Physics (Poland)
Sylwester Porowski, Institute of High Pressure Physics (Poland)
Czeslaw Skierbiszewski, Institute of High Pressure Physics (Poland)
TopGaN Ltd. (Poland)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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