Share Email Print
cover

Proceedings Paper

40 Gb/s low-loss self-aligned silicon optical modulator
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

The silicon optical modulator is a key element in the advancement to meet the continuous demand on larger capacity of data transmission through optical interconnects, where the transmitted signal is required to have very low loss and large bandwidth. We present the experimental results of an all-silicon optical modulator based on carrier depletion in a lateral PIPIN diode. By embedding a p-doped slit in the intrinsic region of the PIN diode, the best compromise between effective index variation and optical loss in the middle of the waveguide is obtained. The PIPIN diode design guarantees a reduction of optical loss because large part of the waveguide is left unintentionally doped. Additionally, self-aligned fabrication was used to have an exact alignment of the active region, and to guarantee maximum modulation efficiency. At 40 Gb/s, the modulator delivered a 6.6 dB extinction ratio, with a 6 dB insertion loss at the operation point.

Paper Details

Date Published: 14 March 2013
PDF: 7 pages
Proc. SPIE 8629, Silicon Photonics VIII, 86290Q (14 March 2013); doi: 10.1117/12.2001975
Show Author Affiliations
Melissa Ziebell, Institut d'Électronique Fondamentale, Univ. Paris Sud XI (France)
Delphine Marris-Morini, Institut d'Électronique Fondamentale, Univ. Paris Sud XI (France)
Gilles Rasigade, Institut d'Électronique Fondamentale, Univ. Paris Sud XI (France)
Jean-Marc Fédéli, CEA-LETI, Minatec (France)
Eric Cassan, Institut d'Électronique Fondamentale, Univ. Paris Sud XI (France)
Laurent Vivien, Institut d'Électronique Fondamentale, Univ. Paris Sud XI (France)


Published in SPIE Proceedings Vol. 8629:
Silicon Photonics VIII
Joel Kubby; Graham T. Reed, Editor(s)

© SPIE. Terms of Use
Back to Top