Share Email Print
cover

Proceedings Paper

Impacts of carrier capture and relaxation rates on the modulation response of injection-locked quantum dot lasers
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Taking into account the carrier dynamics in the wetting layer, excited state and the ground state, the intensity modulation properties of an injection-locked quantum dot laser are studied theoretically through a semi-analytical approach. It is demonstrated that both high carrier capture and relaxation rates enhance the modulation bandwidth as well as the resonance-peak amplitude. Moreover, the pre-resonance dip arising under positive detuning can be eliminated as well, which is beneficial for further bandwidth enhancement. It is also found that a large capture time reduces both the resonance frequency and the damping factor while both are increased by a large relaxation time.

Paper Details

Date Published: 14 March 2013
PDF: 8 pages
Proc. SPIE 8619, Physics and Simulation of Optoelectronic Devices XXI, 861908 (14 March 2013); doi: 10.1117/12.2001929
Show Author Affiliations
Cheng Wang, Institut National des Sciences Appliquées de Rennes, CNRS, Univ. Européenne de Bretagne (France)
Frédéric Grillot, Telecom ParisTech, CNRS (France)
Jacky Even, Institut National des Sciences Appliquées de Rennes, CNRS, Univ. Européenne de Bretagne (France)


Published in SPIE Proceedings Vol. 8619:
Physics and Simulation of Optoelectronic Devices XXI
Bernd Witzigmann; Marek Osinski; Fritz Henneberger; Yasuhiko Arakawa, Editor(s)

© SPIE. Terms of Use
Back to Top