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Proceedings Paper

Responsivity measurements of N-on-P and P-on-N silicon photomultipliers in the continuous wave regime
Author(s): Gabriele Adamo; Diego Agrò; Salvatore Stivala; Antonino Parisi; Costantino Giaconia; Alessandro Busacca; Massimo C. Mazzillo; Delfo Sanfilippo; Pier Giorgio Fallica
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Paper Abstract

We report the electrical and optical comparison, in continuous wave regime, of two novel classes of silicon photomultipliers (SiPMs) fabricated in planar technology on silicon P-type and N-type substrate respectively. Responsivity measurements have been performed with an incident optical power from tenths of picowatts to hundreds of nanowatts and on a broad spectrum, ranging from ultraviolet to near infrared (340-820 nm). For both classes of investigated SiPMs, responsivity shows flat response versus the optical incident power, when a preset overvoltage and wavelength is applied . More in detail, this linear behavior extends up to about 10 nW for lower overvoltages, while a shrink is observed when the reverse bias voltage increases. With regards to our responsivity measurements, carried out in the abovementioned spectral range, we have found a peak around 669 nm for the N-on-P and a peak at 417 nm for the P-on-N SiPM. A physical explanation of the all experimental results is also provided in the paper.

Paper Details

Date Published: 14 March 2013
PDF: 9 pages
Proc. SPIE 8629, Silicon Photonics VIII, 86291A (14 March 2013); doi: 10.1117/12.2001606
Show Author Affiliations
Gabriele Adamo, Univ. degli Studi di Palermo (Italy)
Diego Agrò, Univ. degli Studi di Palermo (Italy)
Salvatore Stivala, Univ. degli Studi di Palermo (Italy)
Antonino Parisi, Univ. degli Studi di Palermo (Italy)
Costantino Giaconia, Univ. degli Studi di Palermo (Italy)
Alessandro Busacca, Univ. degli Studi di Palermo (Italy)
Massimo C. Mazzillo, STMicroelectronics (Italy)
Delfo Sanfilippo, STMicroelectronics (Italy)
Pier Giorgio Fallica, STMicroelectronics (Italy)


Published in SPIE Proceedings Vol. 8629:
Silicon Photonics VIII
Joel Kubby; Graham T. Reed, Editor(s)

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