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Proceedings Paper

Traps and defects in pre- and post-proton irradiated AlGaN-GaN high electron mobility transistors and AlGaN Schottky diodes
Author(s): Yongkun Sin; Brendan Foran; Nathan Presser; Stephen LaLumondiere; William Lotshaw; Steven C. Moss
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Paper Abstract

High electron mobility transistors (HEMTs) based on AlGaN-GaN hetero-structures are promising for both commercial and military applications that require high voltage, high power, and high efficiency operation. Study of reliability and radiation effects of AlGaN-GaN HEMTs is necessary before solid state power amplifiers based on GaN HEMT technology are successfully deployed in satellite communication systems. Several AlGaN HEMT manufacturers have recently reported encouraging reliability data, but long-term reliability of these devices in the space environment still remains a major concern because a large number of traps and defects are present both in the bulk as well as at the surface leading to undesirable characteristics. This study is to investigate the effects of the AlGaN-GaN HEMTs and AlGaN Schottky diodes irradiated with protons.

Paper Details

Date Published: 4 March 2013
PDF: 12 pages
Proc. SPIE 8625, Gallium Nitride Materials and Devices VIII, 86250Z (4 March 2013); doi: 10.1117/12.2001526
Show Author Affiliations
Yongkun Sin, The Aerospace Corp. (United States)
Brendan Foran, The Aerospace Corp. (United States)
Nathan Presser, The Aerospace Corp. (United States)
Stephen LaLumondiere, The Aerospace Corp. (United States)
William Lotshaw, The Aerospace Corp. (United States)
Steven C. Moss, The Aerospace Corp. (United States)


Published in SPIE Proceedings Vol. 8625:
Gallium Nitride Materials and Devices VIII
Jen-Inn Chyi; Yasushi Nanishi; Hadis Morkoç; Joachim Piprek; Euijoon Yoon; Hiroshi Fujioka, Editor(s)

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