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Proceedings Paper

Nanocrystalline GaAs thin films by pulsed laser deposition
Author(s): F. R. Chowdhury; M. Gupta; Y. Y. Tsui
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Paper Abstract

In this study, we investigated the effect of substrate temperature on the change in structural and morphological properties of thin film Gallium Arsenide (GaAs) deposited by pulsed laser deposition (PLD) on Silicon (Si) substrate. The growths were conducted at different substrate temperatures (25º C - 600º C). X-ray Diffraction (XRD), Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were used to study the crystal structure and surface quality of the films. It was observed that the films were increasingly more crystalline in the (111) orientation and also larger in crystal grain size with increase in substrate temperature 285º C and above. The deposited GaAs films on Si were smooth, dense and free of voids, pinholes and cracks for a wide range of temperature.

Paper Details

Date Published: 24 October 2012
PDF: 7 pages
Proc. SPIE 8412, Photonics North 2012, 84121U (24 October 2012); doi: 10.1117/12.2001471
Show Author Affiliations
F. R. Chowdhury, Univ. of Alberta (Canada)
M. Gupta, Univ. of Alberta (Canada)
Y. Y. Tsui, Univ. of Alberta (Canada)


Published in SPIE Proceedings Vol. 8412:
Photonics North 2012
Jean-Claude Kieffer, Editor(s)

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