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Proceedings Paper

Temperature compensated silicon resonators for space applications
Author(s): Mina Rais-Zadeh; Vikram A. Thakar; Zhengzheng Wu; Adam Peczalski
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Paper Abstract

This paper presents piezoelectric transduction and frequency trimming of silicon-based resonators with a center frequency in the low megahertz regime. The temperature coefficient of frequency (TCF) of the resonators is reduced using both passive and active compensation schemes. Specifically, a novel technique utilizing oxide-refilled trenches is implemented to achieve efficient temperature compensation while maintaining compatibility with wet release processes. Using this method, we demonstrate high-Q resonators having a first-order TCF as low as 3 ppm/°C and a turnover temperature of around 90 °C, ideally suited for use in ovenized platforms. Using active tuning, the temperature sensitivity of the resonator is further compensated around the turnover temperature, demonstrating frequency instability of less than 400 ppb. Such devices are ideally suited as timing units in space applications where size, power consumption, and temperature stability are of critical importance.

Paper Details

Date Published: 9 March 2013
PDF: 7 pages
Proc. SPIE 8614, Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS and Nanodevices XII, 86140E (9 March 2013); doi: 10.1117/12.2001434
Show Author Affiliations
Mina Rais-Zadeh, Univ. of Michigan (United States)
Vikram A. Thakar, Univ. of Michigan (United States)
Zhengzheng Wu, Univ. of Michigan (United States)
Adam Peczalski, Univ. of Michigan (United States)


Published in SPIE Proceedings Vol. 8614:
Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS and Nanodevices XII
Rajeshuni Ramesham; Herbert R. Shea, Editor(s)

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