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Proceedings Paper

Variable doping narrow-band response GaAlAs photocathode the preparation method of the research
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Paper Abstract

In order to avoid the low sensitivity common problem of 532nm sensitive narrow-band response photocathode, variable doping narrow-band response GaAlAs photocathode structure is designed. The photocathode is composed of GaAs substrates, Ga1-x1Alx1As buffer layer, Ga1-x2Alx2As doping concentration gradient emissive layer and GaAs protection layer from bottom to top. Among them, exponential doping method is applied to Ga1-x2Alx2As unit layer from the bottom to the top. And a preparation methods of GaAlAs photocathode is developed. For the GaAlAs photocathode components which grow well, chemical cleaning, heating purification and (Cs, O) activation are operated, and ultimately Cs / O activation layer is formed on the surface of Ga1-x2Alx2As doping concentration gradient emissive layer. The highest sensitivity of the photocathode peak response is at 532nm, and the photocathode quantum efficiency in 532nm peaks at 36%.

Paper Details

Date Published: 27 November 2012
PDF: 7 pages
Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 85551I (27 November 2012); doi: 10.1117/12.2001207
Show Author Affiliations
Yuan Xu, Nanjing Univ. of Science and Technology (China)
Nanyang Institute of Technology (China)
XinLong Chen, Nanjing Univ. of Science and Technology (China)
Jing Zhao, Nanjing Univ. of Science and Technology (China)
Honggang Wang, Nanjing Univ. of Science and Technology (China)
BenKang Chang, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 8555:
Optoelectronic Devices and Integration IV
Xuping Zhang; Hai Ming; Joel M. Therrien, Editor(s)

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