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Proceedings Paper

Characteristics of p-GaAs/p-AlxGa1-xAs/si-GaAs studied by surface photovoltage
Author(s): Cui Fan; X. L. Chen; G. Ch. Jiao; C. L. Hu; Y. Sh. Qian
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Paper Abstract

A comparative study of semi-insulating GaAs substrate, p-AlxGa1-x As/ semi-insulating GaAs and p-GaAs/p-AlxGa1-xAs/ semi-insulating GaAs structure has been done using the surface photovoltage (SPV) spectroscopy in metal–insulator–semiconductor (MIS) configuration. Which space charge region (SCR) dominated contribution to SPV in a certain wavelength range was determined. The SPV signals were calculated in a similar way as the open circuit voltage of an illuminated photodiode. One-dimensional continuity equations was adopted for determine the distribution of excess minority carrier. The ideality factor of MIS configuration was investigated in air ambient. The contributions for SPV signal of different layers were discussed in detail. At last the minority carrier diffusion length of different layers and surface or interface recombination velocity were simulated.

Paper Details

Date Published: 20 November 2012
PDF: 7 pages
Proc. SPIE 8564, Nanophotonics and Micro/Nano Optics, 856423 (20 November 2012); doi: 10.1117/12.2001135
Show Author Affiliations
Cui Fan, Nanjing Univ. of Science and Technology (China)
X. L. Chen, Nanjing Univ. of Science and Technology (China)
G. Ch. Jiao, Science and Technology on Low-Light-Level Night Vision Lab. (China)
C. L. Hu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Y. Sh. Qian, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 8564:
Nanophotonics and Micro/Nano Optics
Zhiping Zhou; Kazumi Wada, Editor(s)

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