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Proceedings Paper

InGaN/GaN light-emitting diode on GaN/Si template with AlN/GaN superlattice as interlayer
Author(s): F. R. Hu; Y. J. Wang; H. B. Zhu; Z. C. Liang
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Paper Abstract

Homoepitaxial grown InGaN/GaN p-i-n junction was deposited on GaN/Si template with AlN/GaN supperlattice as interlayer by molecular beam epitaxy. Different surface microstructure of the p-GaN was affected by the amount of Mg flux. Light-emitting diode was fabricated from the p-i-n junction. The crystal properties of InGaN/GaN p-i-n junction and the related light-emitting diode properties were investigated.

Paper Details

Date Published: 27 November 2012
PDF: 8 pages
Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 85551W (27 November 2012); doi: 10.1117/12.2001126
Show Author Affiliations
F. R. Hu, Nanjing Univ. of Posts and Telecommunications (China)
Y. J. Wang, Nanjing Univ. of Posts and Telecommunications (China)
H. B. Zhu, Nanjing Univ. of Posts and Telecommunications (China)
Z. C. Liang, Nanjing Univ. of Posts and Telecommunications (China)


Published in SPIE Proceedings Vol. 8555:
Optoelectronic Devices and Integration IV
Xuping Zhang; Hai Ming; Joel M. Therrien, Editor(s)

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