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Proceedings Paper

Photoemission stability of negative electron affinity GaN photocathode
Author(s): Junju Zhang; Xiaohui Wang; Wenzheng Yang; Weidong Tang; Xiaoqian Fu; Biao Li; Benkang Chang
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Paper Abstract

The stability for reflection-mode GaN photocathode has been investigated by monitoring the photocurrent and the spectral response at room temperature. We watch that the photocurrent of the cathode decays with time in the vacuum system, and compare the spectral response curves after activation and after degradation. The photocurrent decay mechanism for reflection-mode NEA GaN photocathode was studied by the surface model [GaN (Mg) :Cs]:O-Cs. The reduction of the effective dipole quantity, which is caused by harmful gases, is the key factor of the photocurrent reduction.

Paper Details

Date Published: 27 November 2012
PDF: 7 pages
Proc. SPIE 8555, Optoelectronic Devices and Integration IV, 85551C (27 November 2012); doi: 10.1117/12.2001125
Show Author Affiliations
Junju Zhang, Nanjing Univ. of Science and Technology (China)
Xiaohui Wang, Nanjing Univ. of Science and Technology (China)
Wenzheng Yang, Xi'an Institute of Optics and Precision Mechanics (China)
Weidong Tang, Xi'an Institute of Optics and Precision Mechanics (China)
Xiaoqian Fu, Nanjing Univ. of Science and Technology (China)
Biao Li, Nanjing Univ. of Science and Technology (China)
Benkang Chang, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 8555:
Optoelectronic Devices and Integration IV
Xuping Zhang; Hai Ming; Joel M. Therrien, Editor(s)

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